ROHM Semiconductor, in collaboration with German automotive giant Schaeffler, has begun mass production of a next-generation high-voltage inverter brick built with ROHM’s silicon carbide (SiC) MOSFET bare chips. The product, developed as part of their strategic partnership, is already slated for integration by a leading Chinese automaker.
With the launch of volume production of the high voltage inverter brick in Tianjin, China, Schaeffler has reached an important milestone in its electrification strategy. This first volume production is for a leading Chinese car manufacturer that is going to equip its new electric vehicle models with ultra-modern inverter brick technology.
For EV traction inverter, more efficiency and right performance are key. While IGBT is ideal for cost-optimized drive-train, SiC demonstrates higher efficiency under WLTP partial load scenario. Infineon offers the best scalability in market between IGBT and SiC, allowing customers to freely choose the technology for their needs,
The Schaeffler-designed inverter subassembly—often referred to as the “brick”—serves as the core power electronics block that regulates the electric drivetrain through logic-based signals. Within this unit, the high-frequency current pulses required to drive an electric motor are generated.
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Schaeffler has started volume production of its high-voltage inverter brick at its Tianjin site in China, supplying a leading domestic carmaker as part of its push to expand in …
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With the launch of volume production of the high voltage inverter brick in Tianjin, China, Schaeffler has reached an important milestone in its electrification strategy. This first volume production …
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